Effects of Small Island Mobility on Growth in Molecular Beam Epitaxy
نویسندگان
چکیده
The effects of mobility of small islands on island growth in molecular beam epitaxy are studied. It is shown that small island mobility affects both the scaling and morphology of islands during growth. Three microscopic models are considered, in which the critical island sizes are i∗ = 1, 2 and 3 (such that islands of size s ≤ i∗ are mobile while islands of size s ≥ i∗ +1 are immobile). As i∗ increases, islands become more compact, while the exponent γ which relates the island density to deposition rate increases. The morphological changes are quantified by using fractal analysis. It is shown that the fractal dimensions are rather insensitive to changes in i∗. However, the prefactors provide a quantitative measure of the changing morphologies. Typeset using REVTEX 1
منابع مشابه
Effects of Mobility of Small Islands on Growth in Molecular Beam Epitaxy
The effects of mobility of small islands on island growth in molecular beam epitaxy are studied. It is shown that mobility of small islands affects both the scaling and morphology of islands during growth. Three microscopic models are considered, in which the critical island sizes are i∗ = 1, 2 and 3 (such that islands of size s ≤ i∗ are mobile while islands of size s ≥ i∗ +1 are immobile). As ...
متن کاملUniversality Class of Discrete Solid-on-Solid Limited Mobility Nonequilibrium Growth Models for Kinetic Surface Roughening
We investigate, using the noise reduction technique, the asymptotic universality class of the well-studied nonequilibrium limited mobility atomistic solid-on-solid surface growth models introduced byWolf and Villain (WV) and Das Sarma and Tamborenea (DT) in the context of kinetic surface roughening in ideal molecular beam epitaxy. We find essentially all the earlier conclusions regarding the un...
متن کاملSelf-assembled ErAs islands in GaAs: Growth and subpicosecond carrier dynamics
We report the growth of self-assembled ErAs islands embedded in GaAs by molecular beam epitaxy. The nucleation of ErAs on GaAs occurs in an island growth mode leading to spontaneous formation of nanometer-sized islands. Several layers of ErAs islands separated by GaAs can be stacked on top of each other to form a superlattice. X-ray diffraction shows superlattice fringes from such samples. Pump...
متن کاملAnalysis of AlGaN/GaN high electron mobility transistors with nonalloyed Ohmic contacts achieved by selective area growth using plasma assisted molecular beam epitaxy
We achieved low-resistance nonalloyed Ohmic contacts for n-type GaN using selective area growth (SAG) by plasma assisted molecular beam epitaxy (PAMBE). Thus-fabricated high electron mobility transistor (HEMT) demonstrated comparable or more favorable electrical performance than the conventional alloyed counterpart. Meanwhile, the nonalloyed PAMBE-SAG technique avoids problems created by the hi...
متن کاملReaction-limited island nucleation in molecular beam epitaxy of compound semiconductors.
Kinetic Monte Carlo simulations on the basis of rates derived from density-functional calculations are used to investigate the atomic processes in molecular beam epitaxy of GaAs. This approach puts us in a position to describe island nucleation and growth in all relevant atomistic detail by bridging the gap in length and time scales between the mesoscopic scale of growth morphology and the atom...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
دوره شماره
صفحات -
تاریخ انتشار 1996